Scavanging metal stack for a high-k gate dielectric
作者： Vijay Narayanan , Takashi Ando , Martin M. Frank , Changhwan Choi
DOI:
关键词: Gate dielectric 、 Silicon 、 Gate oxide 、 Annealing (metallurgy) 、 Dielectric 、 Metal gate 、 Optoelectronics 、 Materials science 、 Electrode 、 High-κ dielectric 、 Electronic engineering
摘要: A semiconductor structure is provided. The includes a substrate of material and gate dielectric having high constant layer with greater than silicon. located on the substrate. electrode abuts dielectric. electrodes lower metal abutting dielectric, scavenging layer, an upper silicon layer. reduces oxidized at interface between responsive to annealing.
lens.org 参考文章(34)
K. H. Küsters, M. F. Beug, C. Ludwig, Advances in flash memory devices Materials Science-poland. ,(2010)
Qingqing Liang, Zhijiong Luo, Huicai Zhong, Manufacturing method of gate stack and semiconductor device ,(2010)
James K. Schaeffer, Murshed M. Chowdhury, Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same ,(2009)
Mark L. Doczy, Justin K. Brask, Robert S. Chau, Matthew V. Metz, Device with scavenging spacer layer ,(2005)
Nestor A. Bojarczuk, Eduard A. Cartier, Supratik Guha, Matthew W. Copel, Method for forming dielectric stack without interfacial layer ,(2001)
Ming-Chi Wu, Meng-Han Lin, Yu-Ting Yeh, Chen-Hsi Lin, Tseung-Yuen Tseng, Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer 4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting. ,vol. 28, pp. 411- 420 ,(2010) , 10.1149/1.3372595
Deborah Tung, Edwin Sisson, Oxygen-scavenging articles devoid of visual spots upon oxidation and related methods ,(2004)
Hyung-Suk Jung, Jong-Ho Lee, Sung Kee Han, Yun-Seok Kim, Ha Jin Lim, Min Joo Kim, Seok Joo Doh, Mi Young Yu, Nae-In Lee, Hye-Lan Lee, Taek-Soo Jeon, Hag-Ju Cho, Sang Bom Kang, Sang Yong Kim, Im Soo Park, Dongchan Kim, Hion Suck Baik, Young Su Chung, A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control symposium on vlsi technology. pp. 232- 233 ,(2005) , 10.1109/.2005.1469280
W. Weinreich, R. Reiche, M. Lemberger, G. Jegert, J. Müller, L. Wilde, S. Teichert, J. Heitmann, E. Erben, L. Oberbeck, U. Schröder, A.J. Bauer, H. Ryssel, Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films Microelectronic Engineering. ,vol. 86, pp. 1826- 1829 ,(2009) , 10.1016/J.MEE.2009.03.070
Jan Van Houdt, Charge-based nonvolatile memory: Near the end of the roadmap? Current Applied Physics. ,vol. 11, ,(2011) , 10.1016/J.CAP.2011.01.020