作者: ZB He , I Stolitchnov , N Setter , M Cantoni , T Wojciechowski
DOI: 10.1016/J.JALLCOM.2009.05.036
关键词: Microstructure 、 Crystallography 、 Ferroelectricity 、 Transmission electron microscopy 、 Semiconductor 、 Molecular beam epitaxy 、 Thin film 、 Crystallographic defect 、 Materials science 、 Lamellar structure
摘要: The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied means cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are found to be the dominant defects in films. Double-position twin boundaries nearly parallel (1 −2) observed always coexist 1) and stop penetration latter. coexistence both kinds produces complex structures triple-point quadruple-point junctions. fact that CZT layer shorter than those Cd1−xMgxTe buffer layers is explained. show uniform texture direction oriented along [1 1] except a few regions habit faces oblique surface