Growth and strain investigation of Cd0.96Zn0.04Te/GaAs by hot-wall epitaxy

摘要: Abstract A higher quality and a nearly stoichometric composition of Cd1−yZnyTe (y=0.04) epilayers have been successfully grown on GaAs substrate by hot-wall epitaxy (HWE). The growth conditions regarding preheating treatment Cd reservoir temperature were optimized. relationship between thickness was examined four-crystal X-ray rocking curves the best value 120 arcsec for full width at half maximum (FWHM) obtained. dislocations interface, generated from difference in lattice constants, directly observed high-resolution electron microscopy (HREM). variation strain with epilayer shows that density extended defects decreases rapidly increasing up to 5 μm. When reaches 20 μm, almost becomes zero. This result suggests high-quality epilayer, same as bulk crystal, can be obtained thickness. Photoluminescence (PL) spectra 4.2 K show bound-exciton (BE) emission is dominative. relaxation misfit also explored HREM.