作者: Fan Yang , Laurence Méchin , Jean-Marc Routoure , Bruno Guillet , Radoslav A Chakalov
DOI: 10.1063/1.2159546
关键词: Materials science 、 Temperature coefficient 、 Substrate (electronics) 、 Optoelectronics 、 Semiconductor 、 Resistance thermometer 、 Electrical resistivity and conductivity 、 Nuclear magnetic resonance 、 Noise (radio) 、 Thin film 、 Noise-equivalent temperature
摘要: We report measurements of the temperature coefficient resistance (TCR) and low-frequency noise epitaxial La0.7Sr0.3MnO3 (LSMO) thin films deposited on SrTiO3 (STO) (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates. An x-ray-diffraction study showed that were (001) oriented. A normalized Hooge parameter 9×10−31m3 was measured at 300K in case a 10‐μm-wide, 575‐μm-long line patterned 200‐nm-thick film grown STO substrate. This value is among lowest reported values for manganites close to standard metals semiconductors. The corresponding equivalent (NET) constant 300–340K range equal 6×10−7KHz−1∕2 10Hz 150μA LSMO film. very low NET comparable best published results even found be lower than other uncooled thermometers such as amorphous semiconductors, vanadium oxides, or semiconductin...