Systematic Investigation on Deposition Temperature Effect of Ni 1– x O Thin Films for Uncooled Infrared Image Sensor Applications

摘要: Nickel oxide (Ni1– x O) films deposited by RF reactive magnetron sputtering were investigated at various substrate temperatures ranging from room temperature to 250 °C for uncooled infrared image sensor applications. The structural properties measured X-ray diffraction and photoelectron spectroscopy showed that the had a Ni-deficient structure higher more crystallized structures with fewer microstructural defects. These defects an effect on several influencing sensing performance. conductivity was found decrease 9.47 0.10 S/cm deposition temperature. In addition, increase in temperature, both absolute coefficient of resistance normalized Hooge parameter, representing magnitude 1/ $f$ noise, increased 1.56%/K 2.76%/K $9.12\times 10^{\mathrm {-28}}$ $2.40\times {-27}}~\text{m}^{\mathrm {3}}$ , respectively. ( $\alpha _{{H}}$ /n) $^{\mathrm {1/2}}/\vert \beta \vert $ useful figure merit determining performance sensor, varied range $1.77\times {-14}}$ $2.06\times {-14}}~\text{m}^{\mathrm {3/2}}\text{K}$ /% best obtained film °C. Consequently, nickel is deemed be good potential candidate