Preparation and electrical properties of thin native oxide double-layer insulator films on n-type InP
作者： B. Bouchikhi , C. Michel , S. Ravelet , B. Lepley
关键词: X-ray photoelectron spectroscopy 、 Mineralogy 、 Insulator (electricity) 、 Indium 、 State density 、 Analytical chemistry 、 Stoichiometry 、 Conductance 、 Cathode 、 Chemistry 、 Oxide 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: MIS devices are fabricated by using a native oxide double-layer insulator film. Capacitance and conductance measurements carried out at different frequencies temperatures to investigate the electrical characteristics of The interface properties new excellent as compared single-layer diodes. A marked reduction state density well anomalous frequency dependence capacitance observed. surface composition stoichiometry oxides grown on InP or alumina cathode examined XPS technique. results show that layers depleted phosphorus appeared be indium-rich oxides. Les structures ont ete realisees en utilisant un oxyde natif double-couche. Des mesures de capacite et effectuees differentes frequences afin d'etudier les caracteristiques electriques cette double-couche dioxyde. Les proprietes ce nouveau dielectrique sont meilleures que celles des diodes monocouche. La densite etats d'interface ainsi la dependance capacites frequence considerablement diminuees. stoechiometrie oxydes plasma realises une d'InP ou d'alumine examinees par technique XPS. resultats analyse montre est appauvrie phosphore riche indium.
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