Oxidation of InP in a plasma-enhanced chemical vapor deposition reactor
作者： J.F. Wager , W.H. Makky , C.W. Wilmsen , L.G. Meiners
DOI: 10.1016/0040-6090(82)90040-2
关键词:
摘要: During the plasma-enhanced chemical vapor deposition (PECVD) of SiO2 onto InP, an oxide may grow. This could affect electrical properties SiO2-InP interface. In this paper we report on temperature dependence growth rate, composition and topography oxides grown in a PECVD reactor which has separate plasma chamber. The rate main chamber was found to be function transfer tube length greater than thermal oxidation for T<350°C. primarily InPO4 with some In2O3 thicker layers. varied processing.
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