摘要: Often the insulator-semiconductor interface is modelled as an abrupt change from a crystalline semiconductor to amorphorous insulator. For some applications this idealized model satisfactory but for others it leads incorrect results. Realistic modeling of requires understanding chemical and structural properties how was formed. In series lectures, these will be discussed Si/SiO2, InP GaAs/native oxide InP/deposited insulator interfaces. These interfaces are both technologically important typical wide variety possible couples.
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