SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.

摘要: The role of polar interface phonon scattering in determining mobility has been investigated inversion layers MOS structures on InAs and Si. comparison between measurements transport calculations is found to provide an alternative method for properties. Transport at the Si/SiO2 be dominated by several mechanisms various densities. However, InAs/oxide entirely surface roughness, because larger widths this system. Interface contributions are small.