Surface modification of InP by plasma techniques using hydrogen and oxygen

摘要: Abstract The surface chemistry of InP substrates for use in the fabrication electronic devices (MIS structures) was specifically modified by means inductively coupled plasmas excited oxygen and hydrogen results such treatments were elaborated electron spectroscopy chemical analysis. Oxygen plasma give a controlled oxidized overlayer which reaches limiting thickness as function treatment time. InPO 4 thus produced is considerably thicker than natural extended atmospheric exposure. For uncontaminated surfaces, produces indium metal an overlayer, phosphide being reduced to phosphine. Exposure samples leads composite structure consisting In 2 O 3 on ImP. with patched overlayers , reduction but not phosphate.