Control of substrate degradation IN InP LPE growth with PH3 partial pressure
作者： W.Y. Lum , G.E. McWilliams , A.R. Clawson
DOI: 10.1016/0022-0248(79)90075-7
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摘要: Abstract The thermal degradation of polished single crystal InP substrate immediately prior to liquid phase epitaxial (LPE) growth and lattice-matched InGaAsP layers in a graphite boat has been prevented by the introduction phosphine (PH3) gas into hydrogen ambient. dependence process determined be function ambient temperature partial pressure PH3.
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