作者: S. Banerjee , B.M. Arora , M.B. Kurup , K.G. Prasad
DOI: 10.1016/0168-583X(89)90408-4
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摘要: Abstract 2 MeV α-particle channeling and photoluminescence investigations were carried out to study the effects of heat treatment on 〈100〉 InP single crystals heated in powdered or Sn-InP melt ambients at 500–550 ° C for various durations. Observations suggest two types native defects: type I defects which quench luminescence increase concentration a phosphorus-deficient environment, II are responsible changes minimum yield. These latter multiply during short annealing cycles, but reduce longer cycles both ambients.