Preservation of indium phosphide substrates - The In-Sn-P melt revisited

摘要: Using Auger electron spectroscopy and secondary ion mass spectrometry, the authors have detected very high levels of tin (-- 10/sup 21//cm/sup 3/) on (100) InP substrates preserved at temperatures (650/sup 0/-700/sup 0/C) with phosphorus vapor supplied by an In-Sn-P solution. Depth profiling through epilayers grown substrates, however, indicates no buildup epilayer/substrate interface. Surface studies depth control samples reveal that accumulated during preservation is restricted to near-surface region (less than or equal 10A) readily dissolves into In-P melt.