Liquid-phase epitaxial growth of InP and InGaAsP alloys
作者： S.H. Groves , M.C. Plonko
DOI: 10.1016/0022-0248(81)90253-0
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摘要: Abstract Liquid-phase epitaxy (LPE) has been used to grow high-quality layers of InP and InGaAsP alloys on substrates for a wide variety device-development physical-measurement applications. An apparatus featuring transparent furnace an atmosphere with controlled amounts H 2 , PH 3 O proved be flexible enough diverse crystal growth requirements. Carrier concentration vs temperature measurements LPE-grown samples N D - A in the low 10 15 cm -3 range show that they contain moderate deep donors. There is evidence these donor states also account strong peak photoluminescence seen samples. Substrate-orientation studies have shown critically oriented improve morphology heavily Zn-doped InP.
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