Surface Dislocation Theory of Reconstructed Crystals: VPE GaAs
作者： D. L. Rode
关键词: Chemistry 、 Crystallography 、 Computational chemistry 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: By considering lattice stresses arising from linear monatomic steps on a slightly misoriented surface, theory is developed of surface energy as function misorientation singular surface. An energetically attractive step interaction obtained. The stability vicinal surfaces with respect to terrace formation investigated in view this and morphological instabilities low-angle features (terraces, hillocks, pyramids) are found be probable for (100) (111) diamond-type zincblende semiconductor surfaces. A theorem first-order kinetics derived relate crystal growth rate small misorientations. This allows comparison between (on energy) experiments VPE GaAs rate) reported by Hollan Schiller. Good agreement obtained, within experimental error, misorientations 4.5° GaAs. Unter Berucksichtigung von Gitterspannungen, die linearen monoatomaren Stufen auf einer leicht fehlorientierten Oberflache herruhren, wird eine Theorie der Oberflachenenergie als Funktion Fehlorientierung gegenuber singularen Flache entwickelt. Es energetisch attraktive Stufenwechselwirkung erhalten. Die Stabilitat Nachbarflachen bezuglich Bildung einzelner Terrassen im Hinblick diese untersucht und es gefunden, das morphologische Instabilitaten mit Kleinwinkeleigenschaften (Terrassen, “Hugel”, Pyramiden) fur (100)- (111)-Oberflachen Diamanttyp- Zinkblende-Halbleitern wahrscheinlich sind. ein Theorem Kinetik erster Ordnung abgeleitet, um Kristallwachstumsrate kleiner Fehlorientierungen zu verknupfen. Dieses erlaubt einen Vergleich zwischen (mit Oberflachenenergie) Experimenten (an GaAs-Wachstumsraten) gute Ubereinstimmung innerhalb experimentellen Fehlergrenze bis 4,5° (100)-GaAs
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