The roughness of cleaved semiconductor surfaces

摘要: Abstract A surface must be clean and atomically flat to enable a unique simple interpretation of results. In many fundamental studies surfaces are used, whereas flatness is checked only qualitatively or simply assumed present. Therefore in the present investigation cleaved Si Ge have been studied systematically with respect deviations from surface. By using LEED, electron microscopy novel optical reflection technique several parameters determined: angles inclination, average angle, atomic step height, orientation arrangement steps, edge atom density. description shape given by combination various Since about 1–5 % all atoms position, those may very important electronic photoelectric properties.