Texture of surfaces cleaned by ion bombardment and annealing
作者： M. Henzler
DOI: 10.1016/0039-6028(70)90019-1
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摘要: Abstract GaAs (110) surfaces cleaned by ion bombardment and annealing at 350°C show a peculiar LEED pattern consisting of sharp diffuse integer order spots. A method analyzing the diffraction patterns is developed, revealing that surface has many steps constant height random orientation with variety terrace widths. Annealing 550°C yields atomically smooth over least 300 A. The new analysis may be used also for study migration, crystal growth related phenomena.
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