ERRATA: EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID‐PHASE EPITAXY
作者： G. M. Blom , J. M. Woodall
DOI: 10.1063/1.1653441
关键词: Liquid phase 、 Epitaxy 、 Spontaneous emission 、 Optoelectronics 、 Stimulated emission 、 Electroluminescence 、 Materials science 、 Diode 、 Threshold current
摘要: Light‐emitting InP diodes were made by liquid‐phase epitaxy. The most efficient result when the n‐type layers are grown from a Sn‐doped melt, while p‐type same but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% 77°K observed in uncoated diodes. Threshold current densities for stimulated emission as low 750 A/cm2 77°K. Spontaneous can be normal p‐n junction.
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