Interface formation of deposited insulator layers on GaAs and InP

摘要: Abstract The factors which influence the interface formation of deposited layers are discussed. This paper models insulator/semiconductor during chemical vapor deposition (CVD) SiO 2 and SiON onto InP GaAs; it deals primarily with nature as a result CVD not electronic properties interface. Although specific examples films chemically GaAs given, modeling should be useful for all III–V compounds. Thermal decomposition surface, substrate thermal oxidation, surface reactions interdiffusion considered. previously published experimental data on diffusion reaction gallium, arsenic, indium phosphorus thermally grown silicon serve framework layer model presented in this work. Auger analysis electron spectroscopy used to demonstrate applicability provide information chemistry layer/GaAs layer/InP interfaces. It is found that /InP similar predicted by whilst SiON/GaAs not. contains an In O 3 P 5 when occurs at 450 °C but 340 °C. Indium both temperatures. No Ga or As was detected interface, high concentration observed appears gettering oxygen gas from reactor chamber.