Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition
作者： K.G. Germanova , E.P. Valcheva
DOI: 10.1016/0040-6090(87)90317-8
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摘要: Abstract The preparation of dielectric layers possessing good insulating and interface properties is most important for metal/insulator/semiconductor applications. This problem presents a considerable challenge in the case narrow gap semiconductors. In this paper we report on electrical metal/insulator/ semiconductor structures produced p-InSb(111) by plasma-enhanced chemical vapour deposition SiO 2 . are characterized low high frequency capacitance-voltage techniques temperature range 4.2–77 K. An appropriate theoretical model employed evaluation experimental data which non-parabolicity InSb conduction band, incomplete ionization recharging dopants degenerate statistics taken into account. applicability device demonstrated.
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