Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition
作者： Y. K. Su , U. H. Liaw
DOI: 10.1063/1.357265
关键词:
摘要: Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct photochemical‐vapor deposition at low temperature below 200 °C using 2537 A UV light. Ellipsometric studies prove that the refractive index and rate of photo‐oxide films depend substrate gas ratio. The evaluated Auger electron spectroscopy (AES) depth profile showed composition atoms were distributed uniformly throughout oxide film. AES analysis found dominant components film are silicon oxygen. Fourier transform infrared absorption shows grown has strong Si—O bonds with few Si—H bonds. chemical x‐ray photoelectron constituents semiconductors’ outdiffusion into few. Metal‐oxide‐semiconductor (MOS) capacitors constructed InSb substrates. Capacitance voltage (C‐V) characteristics MOS measured 77 K. inte...
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