Hysteresis free SiO2/InSb metal‐insulator‐semiconductor diodes
作者： Masamichi Okamura , Makoto Minakata
DOI: 10.1063/1.334397
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摘要: Hysteresis free capacitance‐voltage (C‐V) characteristics of SiO2/InSb metal‐insulator‐semiconductor (MIS) diodes are attained by introducing an in situ Br vapor etching technique into the fabrication process. Interface state density is also reduced using this technique. It found that following etching, MIS C‐V strongly dependent on both SiO2 film deposition temperature and oxygen flow rate. The optimum condition for to obtain hysteresis curves interface ≤1×1011 cm−2 eV−1 determined InSb diodes. area typical conditions located rate range 5–6 cc/min 200–210 °C. refractive indices films 1.44–1.45, breakdown field strengths more than 2×106 V/cm, dielectric constants 1 MHz typically 4.7 at 77 K, respectively.
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