Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation
作者： H Lim , JA Baglio , N DeCola , HL Park , JI Lee
DOI: 10.1063/1.347482
关键词: Layer (electronics) 、 Electrical resistivity and conductivity 、 Mineralogy 、 Oxide 、 Diode 、 Substrate (electronics) 、 Optoelectronics 、 Semiconductor 、 Hysteresis 、 Indium phosphide 、 Chemistry
摘要: A remote plasma‐enhanced oxidation method, with two different reactant gases of N2O and POCl3, is used to grow stable insulating layers on an InP substrate. The compositional profile the oxide grown was very similar that thermally oxide. hysteresis capacitance‐voltage (C‐V) characteristics in this system relatively small determined by compensative effects mobile charges capture electrons at interface. unstable nature C‐V metal‐insulator‐semiconductor (MIS) diode prepared POCl3 seems be related gradual interface and/or P‐oxide deficiency Even if a layer InPO4 can plasma, poor transition region must overcome achieve good MIS structure.
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