Monte Carlo simulation of damascene electroplating: effects of additives

作者: Y. Kaneko , Y. Hiwatari , K. Ohara , F. Asa

DOI: 10.1080/08927020601067540

关键词: ElectroplatingVacancy defectComposite materialDeposition (phase transition)Monte Carlo methodCopper interconnectMaterials scienceKinetic Monte CarloThin filmCrystal growth

摘要: The influence of additives on the filling process via holes in damascene electroplating is investigated with use a kinetic Monte Carlo method. basic system solid-by-solid model for crystal growth which includes vacancy formation during thin film. Three kinds are included to control local surface rate. Inhibitors and levelers have effect preventing deposition, while accelerators increase Levelers modeled stick tips surface. We performed series simulations by changing parameters characterize see their mechanism. It shown that void-free possible combination effects additives.

参考文章(12)
Yang Cao, Premratn Taephaisitphongse, Radek Chalupa, Alan C. West, Three-Additive Model of Superfilling of Copper Journal of The Electrochemical Society. ,vol. 148, ,(2001) , 10.1149/1.1377898
G. H. Gilmer, P. Bennema, Simulation of Crystal Growth with Surface Diffusion Journal of Applied Physics. ,vol. 43, pp. 1347- 1360 ,(1972) , 10.1063/1.1661325
T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford, D. Josell, Superconformal Electrodeposition of Copper in 500-90 nm Features Journal of The Electrochemical Society. ,vol. 147, pp. 4524- 4535 ,(2000) , 10.1149/1.1394096
P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, H. Deligianni, Damascene Copper electroplating for chip interconnections Ibm Journal of Research and Development. ,vol. 42, pp. 567- 574 ,(1998) , 10.1147/RD.425.0567
Y. Kaneko, Y. Hiwatari, K. Ohara, T. Murakami, Computer simulation of thin film growth with defect formation Surface and Coatings Technology. ,vol. 169-170, pp. 215- 218 ,(2003) , 10.1016/S0257-8972(03)00082-3
Yutaka Kaneko, Yasuaki Hiwatari, Katsuhiko Ohara, Monte Carlo Simulation of Thin Film Growth with Defect Formation: Application to Via Filling Molecular Simulation. ,vol. 30, pp. 895- 899 ,(2004) , 10.1080/08927020410001709316
Yutaka Kaneko, Yasuaki Hiwatari, Katsuhiko Ohara, Tohru Murakami, Monte Carlo Simulation of Thin Film Growth with Lattice Defects. Journal of the Physical Society of Japan. ,vol. 69, pp. 3607- 3613 ,(2000) , 10.1143/JPSJ.69.3607
T. P. Moffat, D. Wheeler, D. Josell, Electrodeposition of Copper in the SPS-PEG-Cl Additive System I. Kinetic Measurements: Influence of SPS Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1651530
Madoka Hasegawa, Yoshinori Negishi, Takuya Nakanishi, Tetsuya Osaka, Effects of Additives on Copper Electrodeposition in Submicrometer Trenches Journal of The Electrochemical Society. ,vol. 152, ,(2005) , 10.1149/1.1867672
Rohan Akolkar, Uziel Landau, A Time-Dependent Transport-Kinetics Model for Additive Interactions in Copper Interconnect Metallization Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1799431