作者: S. Barth , H. Bässler , H. Rost , H. H. Hörhold
关键词: Indium tin oxide 、 Materials science 、 Electrode 、 Photoconductivity 、 Silicon monoxide 、 Charge carrier 、 Optoelectronics 、 Electric field 、 Dissociation (chemistry) 、 Photon energy
摘要: Steady-state photoconduction was studied in typically 100-nm-thick films of a polyphenylenevinylene derivative with ether linkages the backbone. Samples were prepared sandwich configuration between indium tin oxide (ITO) and Al electrodes. Forward photocurrents measured upon irradiating through positively biased ITO electrode decreased by three orders magnitude when 8\char21{}10-nm-thick silicon monoxide (SiO) layer had been deposited on top to prevent photoinjection positive charge carriers. Insertion SiO can thus be used as tool separate extrinsic from intrinsic sources optical charge-carrier generation. Analysis dependences temperature, electric field, photon energy indicate that they described terms Onsager's theory geminate pair dissociation either one or dimensions.