Equilibrium‐to‐nonequilibrium transition in MOS (surface oxide) tunnel diode
作者： V. A. K. Temple , M. A. Green , J. Shewchun
DOI: 10.1063/1.1663157
关键词: Thermodynamic equilibrium 、 Non-equilibrium thermodynamics 、 Quantum tunnelling 、 Materials science 、 Semiconductor 、 Condensed matter physics 、 Transistor 、 Tunnel diode 、 Thermal equilibrium 、 Diode 、 General Physics and Astronomy
摘要: When the insulator barrier in a tunneling MIS diode is less than certain critical thickness (approximately 30 A for Al–SiO2–Si at 300 °K), semiconductor departs from thermal equilibrium and new type of ``nonequilibrium'' current‐voltage characteristic results. Such nonequilibrium diodes have been found to possses current multiplication properties used as basis tunnel surface oxide transistor (SOT) reported by Shewchun Clarke. They also applied direct energy conversion employing electron‐voltaic photovoltaic effects. The transition this mode investigated function thickness, metal work function, temperature well number parameters. nomograph presented assist determining when mode. Surface‐state seen play an important role part curre...
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