Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces
作者： C. R. Crowell , H. B. Shore , E. E. LaBate
DOI: 10.1063/1.1713959
关键词: Schottky diode 、 Electromagnetic shielding 、 Schottky barrier 、 Computational chemistry 、 Ohmic contact 、 Dielectric 、 Electric field 、 Semiconductor 、 Metal 、 Chemistry 、 Condensed matter physics 、 General Physics and Astronomy
摘要: … (or interface) states and the thickness of the interface layer between … For clean metal-Si interfaces, measurements of barrier … tions and barrier heights for both Mg-Si and Ca-Si diodes are …
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