EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES
作者： C. R. Crowell , S. M. Sze , W. G. Spitzer
DOI: 10.1063/1.1753976
关键词:
摘要:
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(3)
C. A. Mead, W. G. Spitzer, Fermi Level Position at Semiconductor Surfaces Physical Review Letters. ,vol. 10, pp. 471- 472 ,(1963) , 10.1103/PHYSREVLETT.10.471
D. Kahng, Conduction properties of the Au-n-type—Si Schottky barrier Solid-State Electronics. ,vol. 6, pp. 281- 295 ,(1963) , 10.1016/0038-1101(63)90086-8
C. R. Crowell, W. G. Spitzer, L. E. Howarth, E. E. LaBate, Attenuation Length Measurements of Hot Electrons in Metal Films Physical Review. ,vol. 127, pp. 2006- 2015 ,(1962) , 10.1103/PHYSREV.127.2006