A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20
作者： Mohammad Rezaul Huque Khan , Hisashi Nakayama , Theeradetch Detchprohm , Kazumasa Hiramatsu , Nobuhiko Sawaki
DOI: 10.1016/S0038-1101(96)00231-6
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摘要: Abstract Schottky barrier contacts using Au and ohmic contact with Al were made on AlxGa1−xN grown by OMVPE in the composition range 0 ≤ x 0.20. All diodes characterized between 77 373 K. Under forward bias value of ideality parameter n was found to be 1.04-2.40 at room temperature irrespective x. The height (ΦB) all up = 0.20 determined current-voltage (I-V) capacitance-voltage (C-V) measurements. relationship is nonlinear ΦB tend downward similar compositional dependence band gap. Temperature values > 1 are considered due spatial inhomogeneities metal-semiconductor interface. A difference I-V C-V measurements attributed deformation distribution.
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