Relation between interface states and temperature behavior of the barrier height of silver contacts on clean cleaved n-type silicon
作者： J.D. Van Otterloo , J.G. DE Groot
DOI: 10.1016/0039-6028(76)90170-9
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摘要: Abstract The properties of silver-silicon interfaces formed by cleaving n-type silicon in ultra high vacuum (UHV) a stream evaporating silver atoms were studied. barrier heights these contacts measured at different temperatures using C - V techniques. All measurements performed UHV. dependence the height upon temperature did not follow Si band gap as it is usually found. behavior depended on roughness surface. can be explained assuming specific structure interface states. For Ag atomically smooth Si, states found to arranged two bands, one 4 × 10 −3 eV wide with acceptor type 0.18 below intrinsic level E i and density 17 states/cm 2 eV, other 1 donor its upper edge 0.28 , 14 eV.
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