Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces
作者： H. H. Weitering , J. P. Sullivan , R. J. Carolissen , R. Pérez‐Sandoz , W. R. Graham
DOI: 10.1063/1.362390
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摘要: We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)(√3×√3)R30°–Ag, Si(100)2×1–Ag, polycrystalline Ag/Si interfaces, using different doping levels for both n‐ p‐type silicon wafers. Our data strongly suggest that the Schottky barrier heights (SBHs) are spatially nonuniform. The distribution local effective SBHs at interfaces is modeled by a summation single Gaussian, representing spread in SBH majority contact, two half‐Gaussians which represent high‐ low‐barrier tails full distribution. Despite fact average hardly structure dependent, distributions very broad markedly each interface. characterized narrower centered substantially smaller mean. argue electrical inhomogeneity related to structural interface direct consequence kinetics mode growth Ag on Si.We whi...
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