Many-body effect at metal-semiconductor junctions. II. The self energy and band structure distortion

摘要: For pt. I see abstr. A75119 of 1972. When a metal is placed upon the surface semiconductor resulting changes in electron interaction near interface produce exchange and correlation potential. The most important aspect that potential differ with state considered. In particular reaction valence conduction bands are very different causing band gap region. image has opposite signs corresponding to semiclassical hole picture; this shown be due screened difference between two bands. calculated numerically up for limiting cases covalent ionic semiconductor. Finally behaviour these types briefly discussed light results on Schottky barriers.