Gunn-Hilsum Effect Electronics
作者： M.P. Shaw , H.L. Grubin , P.R. Solomon
DOI: 10.1016/S0065-2539(08)60321-2
关键词: Noise (electronics) 、 Point (geometry) 、 Physics 、 Amplifier 、 Optics 、 Gunn diode 、 Electrical efficiency 、 Space charge 、 Interface (computing) 、 Electrical engineering 、 Electronics
摘要: Publisher Summary This chapter discusses the gunn-hilsum effect electronics. It presents a discussion of operating principles and characterization short negative differential mobility (NDM) devices. is seen that material parameters device, metal-semiconductor contact, circuit, space charge distribution, temperature distribution all affect device operation. All these contributions manifest themselves in DC-driven oscillator output, performance small large signal amplifiers, noise properties device. There now abundant experimental evidence supporting fact within NDM element non-uniform acceptance this feature only way to reconcile experiment with theory. Device technology devoted making better Therefore, control over contact procedures materials growth always being sought. However, from point view understanding operation, it clear knowledge interface still weak line. Correlation analytical theory large-signal computer simulation requires an adequate low-resistance
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