Negative Resistance Arising from Transit Time in Semiconductor Diodes
作者： W. Shockley
DOI: 10.1002/J.1538-7305.1954.TB03742.X
关键词: Diode 、 Amplifier 、 Gyrator 、 Terminal (electronics) 、 Electrical engineering 、 Hall effect 、 Negative resistance 、 Semiconductor 、 Transit time 、 Optoelectronics 、 Engineering 、 General Engineering
摘要: The structural simplicity of two-terminal compared to three-terminal devices indicates the potential importance two terminal employing semiconductors and having negative resistance at frequencies properly related transit time carriers through them. Such resistances may be combined with unsymmetrically transmitting components, such as gyrators or Hall effect plates, form dissected amplifiers that made simulate conventional operate high frequencies. characteristics several structures are analyzed on basis theory it is found possible for designed structures.
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