作者: B. K. Ridley
DOI: 10.1007/978-1-4615-2822-7_1
关键词: Physics 、 Drift velocity 、 Semiconductor 、 Tunnel diode 、 Dielectric strength 、 Thermal runaway 、 Condensed matter physics 、 Quantum tunnelling 、 Impact ionization 、 Zener diode
摘要: The simplest considerations concerning power consumption in an electrical circuit soon leads to the idea that if contained element with a negative differential resistance (NDR) it would be possible create a.c. rather than consume it. Such have highly non-linear properties, but was well known from study of dielectric breakdown large non-linearities were common insulators at high fields. cause seen its origin either thermal runaway through excessive Joule heading or purely effects. latter infinitely more interesting since often synonymous melting. first theory by Zener 19341 described terms quantum-mechanical tunnelling between valence and conduction bands, critical fields predicted proved significantly larger those observed alkali halides. It took invention diode for this come into own, though, ironically role as switch, breakdown, practice, is frequently consequence avalanche tunnelling. To compound irony, pure has been exploited “tunnel diode” which famous NDR. Other mechanisms emphasized impact ionization subsequent effects, phenomena familiar studies gases. Theories how electrons polar solid could pick up energy field they dissipate single collision developed von Hippel2 Frohlich3,4 subsequently elaborated Callen5 Frohlich Paranjape.6 This really beginning hot electrons, parallel Davydov7,8 others USSR on effect distributed function electron mobility semiconductor helped lay theoretical foundations topic.