Use of n+ spike doping regions as nonequilibrium connectors
作者： P.H. Beton , A.P. Long , N.R. Couch , M.J. Kelly
DOI: 10.1049/EL:19880294
关键词:
摘要: Very thin n/sup +/ layers of semiconductor (spike doping) may be used to control the potential difference between microelectronic components while not significantly modifying any nonequilibrium distributions electron energy or momentum across their extent. The authors demonstrate this general principle with example a hot injection Gunn diode. >
harvard.edu
sci-hub.st 参考文章(7)
Melvin P. Shaw, Peter R. Solomon, Harold L. Grubin, The Gunn-hilsum Effect ,(1979)
M.P. Shaw, H.L. Grubin, P.R. Solomon, Gunn-Hilsum Effect Electronics Advances in Electronics and Electron Physics. ,vol. 51, pp. 309- 433 ,(1980) , 10.1016/S0065-2539(08)60321-2
J. R. Hayes, A. F. J. Levi, W. Wiegmann, Hot-electron spectroscopy of GaAs Physical Review Letters. ,vol. 54, pp. 1570- 1572 ,(1985) , 10.1103/PHYSREVLETT.54.1570
A P Long, P H Beton, M J Kelly, Hot-electron transport in heavily doped GaAs Semiconductor Science and Technology. ,vol. 1, pp. 63- 70 ,(1986) , 10.1088/0268-1242/1/1/009
P. H. Beton, A. P. Long, M. J. Kelly, Hot‐electron transport in GaAs in the presence of a magnetic field Applied Physics Letters. ,vol. 51, pp. 1425- 1427 ,(1987) , 10.1063/1.98645
M. Heiblum, M. I. Nathan, D. C. Thomas, C. M. Knoedler, Direct observation of ballistic transport in GaAs. Physical Review Letters. ,vol. 55, pp. 2200- 2203 ,(1985) , 10.1103/PHYSREVLETT.55.2200
W. Fawcett, A.D. Boardman, S. Swain, Monte Carlo determination of electron transport properties in gallium arsenide Journal of Physics and Chemistry of Solids. ,vol. 31, pp. 1963- 1990 ,(1970) , 10.1016/0022-3697(70)90001-6