Control of the Schottky barrier using an ultrathin interface metal layer
作者： X. Wu , M. T. Schmidt , E. S. Yang
DOI: 10.1063/1.100986
关键词:
摘要: Fermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in bimetal structure. Using thin interfacial layers, the was smoothly varied from characteristic value thick metal to that metal. The variation height versus inner thickness found exhibit an exponential behavior extending over few monolayers coverage. This experiment indicates new approach fundamental study metal‐semiconductor could be useful device applications.
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