Effective metal screening and Schottky-barrier formation in metal-GaAs structures
作者： X. Wu , E.S. Yang
DOI: 10.1109/55.56486
关键词:
摘要: The Fermi-level movement in a Schottky barrier is investigated using bimetal thin-film structure. functional dependence of the height on inner metal thickness formulated terms effective screening length and interface trap states. This model used to describe experimental results Pt-Ti-GaAs Ti-Pt-GaAs diodes. It found that lengths for Pt Ti are 6.5 7.0 AA, respectively, significantly greater than ideal values theory N.F. Mott H. Jones (1958). indicates potential drop inside electrode can evolve over several monolayers contact. >
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sci-hub.se 参考文章(10)
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