Semiconductor device, method of manufacturing the same and electronic device including the device
作者： Huilong Zhu
DOI:
关键词: Optoelectronics 、 Gate stack 、 Substrate (printing) 、 Communication channel 、 Layer (electronics) 、 Second source 、 Semiconductor device 、 Materials science
摘要: There are provided a semiconductor device, method of manufacturing the same, and an electronic device including device. According to embodiment, may include substrate, first second formed on substrate. Each includes source/drain layer, channel layer stacked substrate in sequence, also gate stack surrounding periphery layer. The substantially co-planar with each other, respective layers stressed differently.
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