Semiconductor device having gate all around type transistor and method of forming the same

摘要: A semiconductor device having a transistor of gate all around (GAA) type and method fabricating the same are disclosed. SOI substrate composed layer, buried oxide layer lower is prepared. The has at least one unit dual silicon germanium layer. patterned to form an active pattern certain direction. An insulation formed cover pattern. etch stop stacked on covered with removed region crossing channel region. isotropically etched selectively cavity In state that removed, exposed surface conductivity by chemical vapor deposition (CVD) fill including cavity. middle part can be divided multiple patterns in line.