Deep‐level luminescence in AlxGa1−xAs double‐heterostructure lasers
作者： J. P. van der Ziel , R. L. Hartman
DOI: 10.1063/1.90849
关键词: Electroluminescence 、 Double heterostructure 、 Vacancy defect 、 Substrate (electronics) 、 Optoelectronics 、 Laser 、 Semiconductor laser theory 、 Materials science 、 Luminescence 、 Crystallographic defect 、 Physics and Astronomy (miscellaneous)
摘要: It is shown that the deep level (∼1.0 eV) luminescence observed in double‐heterostructure lasers originates from E3 radiation damage trap (Ga vacancy) or a closely related vacancy‐donor complex n‐type GaAs substrate region rather than active as had been reported previously.
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