Photoluminescence as a diagnostic of semiconductors

摘要: Abstract Photoluminescence provides a non-destructive technique for the analysis of semiconductors. The method information both on intrinsic and extrinsic semiconductors properties. This article reviews application to effects induced by impurities or lattice defects. is shown be particularly suitable centres responsible shallow donor acceptor species which electrical properties are usually controlled, as well all forms explicit luminescence activator. It can also applied certain deep states, provided that carrier exchange with these does not involve so much local relaxation associated transitions become entirely non-radiative. Even when this so, transition metals may still detected through internal electronic relaxations within given charge state, at least final step frequently radiative. In cases, measurements low cryogenic temperatures required obtain fullest spectroscopic necessary characterise type discriminate between class. honor acceptor-related recombinations bound exciton, pair free type, equivalent processes seen other types centre. These topics treated in separate sections review, following an introduction includes general remarks about equipment technique. Examples taken from most technologically important semiconductor systems. Compared usual elementary techniques characterisation, photoluminescence has advantages generally easy discrimination provide simultaneous many However, it comparatively less suited determination impurity concentration, majority species. Techniques whereby concentration obtained various briefly described. review ends subsection devoted topographic involving photoluminescence, closely-related cathodoluminescence junction electroluminescence, reveal totally non-radiative extended defects spatial distributions radiative