Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate

摘要: The spontaneous radiation generated in the active region of (Al,Ga)As double‐heterostructure (DH) proton‐delineated stripe‐geometry lasers has been studied by measuring luminescence (Ls) emitted from a window fabricated metallization on substrate. Observations intensity this with an image converter provide effective means for detecting growth‐, processing‐, and aging‐induced defects. In addition, these measurements simple procedure separating changes optical loss radiative‐recombination efficiency. Thus, Ls observations are useful quality control laser‐aging analysis. For 8% aluminum region, is shown to be principally reemitted very thin layer GaAs substrate at interface n‐type ternary layer. Reasonably high spatial resolution (∼3 μm) stripe retained absorption‐reemission process. devices no adde...