Far field asymmetry in narrow stripe gain-guided lasers
作者： J. Kardontchik
关键词: Near and far field 、 Double heterostructure 、 Physics 、 Optoelectronics 、 Optical power 、 Semiconductor device 、 Plane (geometry) 、 Semiconductor laser theory 、 Optics 、 Laser 、 Asymmetry
摘要: A number of 5 μm stripe width shallow proton-bombarded double heterostructure (DH) AlGaAs LPE grown lasers show asymmetric light versus current characteristics and far fields. The optical power output above threshold is not the same for both faces at a given current. field patterns in junction plane from two mirrors are also different: angular distribution emitted mirrors. asymmetry fields subject this paper. It suggested that large loss near face with lower may explain different observed Possible explanations origin discussed.
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