Width of the Spontaneous Emission Region in Degenerate GaAs p‐n Junctions

摘要: The spontaneous emission of GaAs mesa diodes fabricated from 2×1018 cm−3 n‐type material was observed at 77°K as a function applied voltage in direction normal to the plane junction. p side represents spectral shape generated When n spectra whose peaks shift with forward bias (due band filling) have periodically occurring enhancement and attenuation. These periodic features are caused by interference reflected gold contact that partially covers diffused surface. Analysis reflection Au‐GaAs interface indicates adjacent minima or maxima should average separation energy 150/xj meV, where xj is junction depth microns. In addition, this analysis relates maximum attenuation active region width demonstrates band‐filling radiative recombinati...