Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence
作者： Stefano Sanguinetti , Mario Guzzi , Massimo Gurioli
DOI: 10.1016/B978-0-444-53099-8.00006-3
关键词: Materials science 、 Photoluminescence 、 Exciton 、 Spontaneous emission 、 Homogeneous broadening 、 Quantum well 、 Characterization (materials science) 、 Nanostructure 、 Optoelectronics 、 Semiconductor
摘要: Photoluminescence (PL) is one of the most widely diffused experimental techniques for characterization semiconductor nanostructures (in particular quantum wells (QWs)) and study their electronic properties. PL allows to a number interesting intrinsic effects in QWs, like exciton binding energy increase due carrier localization, homogeneous broadening recombination line, carrier–carrier interaction, so on. In addition, analysis radiative spectra can help structure, providing information on interface morphology quality materials. this chapter that be gained from critically summarized with aim reference scheme through measurements. The discussion supported by wide detailed bibliography, which basic textbooks, review articles, research papers are included order provide reader up-to-date application optical structural properties QWs.
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