Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps
作者： Maria Herminia Balgos , Jessica Pauline Afalla , Sheryl Vizcara , Deborah Lumantas , Elmer Estacio
DOI: 10.1007/S11082-015-0192-4
关键词:
摘要: The Cardona equation describing the temperature behavior of a bulk semiconductor is utilized to fit experimental photoluminescence data for both strained and unstrained quantum wells (QWs). To account confinement energy strain energy, was modified include respective offsets. Results modeling experimentally obtained PL GaAs/AlGaAs QWs case, InGaAs/GaAs shows that gives excellent fits even QW bandgaps. Thus, extract eigenenergies, which are verifiable using usual effective mass approximation method in solving Schrodinger’s finite potential well.
springer.com
sci-hub.se 参考文章(15)
Eric C. Larkins, James S. Harris, Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs Molecular Beam Epitaxy. pp. 114- 274 ,(1995) , 10.1016/B978-081551371-1.50004-4
Inspec, Pallab Bhattacharya, Properties of Iii-V Quantum Wells and Superlattices ,(2011)
Umesh Mishra, Jasprit Singh, Semiconductor Device Physics and Design ,(2008)
Robin F.C. Farrow, Molecular Beam Epitaxy: Applications to Key Materials ,(1995)
Stefano Sanguinetti, Mario Guzzi, Massimo Gurioli, Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence Characterization of Semiconductor Heterostructures and Nanostructures. pp. 175- 208 ,(2008) , 10.1016/B978-0-444-53099-8.00006-3
Jasprit Singh, Electronic and Optoelectronic Properties of Semiconductor Structures ,(2007)
Carlo Lamberti, Characterization of Semiconductor Heterostructures and Nanostructures Elsevier. pp. 1- 486 ,(2008)
L. Viña, S. Logothetidis, M. Cardona, Temperature dependence of the dielectric function of germanium Physical Review B. ,vol. 30, pp. 1979- 1991 ,(1984) , 10.1103/PHYSREVB.30.1979
Y.P. Varshni, Temperature dependence of the energy gap in semiconductors Physica D: Nonlinear Phenomena. ,vol. 34, pp. 149- 154 ,(1967) , 10.1016/0031-8914(67)90062-6
N. N. Ledentsov, N. Tsukada, K. Ploog, Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices Applied Physics A. ,vol. 54, pp. 261- 264 ,(1992) , 10.1007/BF00323847