Carrier thermodynamics in InAs/In x Ga 1-x As quantum dots

摘要: We present a detailed study of the carrier thermodynamics in $\mathrm{InAs}∕{\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ self-assembled quantum dots performed via an accurate determination dependence dot photoluminescence efficiency on temperature, excitation power density and wavelength. have found experimental evidences that electron hole populations are highly correlated. also show other puzzling effects, like onset superlinear integrated intensity density, stem from saturation, by photogenerated carriers, nonradiative centers barrier.