Temperature dependence of positron trapping in a quenched Al-1.5?10-2 at%Si alloy
作者： G M Hood , R J Schultz
DOI: 10.1088/0305-4608/12/12/011
关键词: Positron annihilation 、 Materials science 、 Alloy 、 Condensed matter physics 、 Positron trapping 、 Crystal 、 Annihilation
摘要: Doppler-broadening measurements of positron annihilation in quenched single-crystal Al-1.5*10-2at%Si show a reversible temperature dependence the characteristics which varies according to defect state crystal. This effect seems be largely able account for an apparent discrepancy between data samples measured at 78K and higher temperatures.
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