Method for manufacturing light-emitting device and light-emitting device manufactured by the same
作者： Miyuki Iduka , Akihiro Kojima , Yoshiaki Sugizaki , Yosuke Akimoto , Ryuichi Togawa
DOI:
关键词: Substrate (electronics) 、 Optoelectronics 、 Electrode 、 Light emitting device 、 Layer (electronics) 、 Semiconductor 、 Materials science 、 Laser light
摘要: A method for manufacturing a light-emitting device (110,111,120,130) is disclosed. The includes removing substrate (10) from semiconductor layer (5). (5) provided on first main surface (10a) of the (10). (33). At least top (5a) and side surfaces (5b) are covered with insulating film (13). electrode portion (14) second (15) electrically continuous to provided. (13) (16). performed by irradiating laser light (LSR) (10b) opposite (10a). Each band-gap energy (16) smaller than (LSR). Also disclosed which can be produced using manufacturing.
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